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GeniCore U-FAST(SPS) Compact Device

The SPS (Spark Plasma Sintering) technology, also called FAST (Field Assisted Sintering Technology), enables effective consolidation of pure metal powders, metal alloys, as well as ceramic and metal composites using pulsed direct current. The key aspect of FAST technology is the ability to perform the sintering process at a much lower temperature than other available methods. This has a positive effect on limiting grain growth and provides much better parameters of the created materials. The advantages of FAST also include very short sintering time and homogeneity of the resulting material and high energy efficiency associated mainly with the direct generation of heat inside the material. GeniCore U-FAST, thanks to its advanced heating system based on a unique pulse shape allows to achieve better results compared to other available FAST devices. This fact has determined the name of the device hence the name GeniCore U-FAST (Upgraded Field-Assisted Sintering Technology). The tests carried out so far on U-FAST materials open up a number of possibilities in areas where the expected material quality is not achievable with other methods. Current activities of GeniCore have confirmed the validity of the use of U-FAST materials in the tool industry, mining and advanced electronics. These are one of the first application possibilities, which will certainly be much more given the intensity of research work.

U-FAST Compact for R&D Applications

Model Recommended Sintered Diameter [mm] Pressing force* [kN] Max Current** [A] Max Voltage [V] Ultimate vacuum [mbar]
U-FAST Compact  ∅ 10 35 1 100 14 < 9×10-2
∅ 20 55 2 200 14 < 9×10-2
∅ 30 75 3 330 14 < 9×10-2
U-FAST Compact  – HV ∅ 10 35 1 100 14 < 5×10-5
∅ 20 55 2 200 14 < 5×10-5
∅ 30 75 3 330 14 < 5×10-5

* Pressing force – possible options of hydraulic system or servopress.

** Max Current – The final value of the current is related to the value of the on-site connection voltage , so it can vary accordingly. Max output current can be increased up to 5 000 A.

The GeniCore U-FAST Compact model is a great choice for R&D applications where the aim is to develop new materials which can be then scaled up to bigger diameters by using GeniCore U-FAST GC (SPS) Device.

Manufacturing process

Mold inside U-FAST chamber

Temperature measurement

Conventional Method

Indirect heating (radiation / convection)
  • Heating by radiation
  • Low heating factor
  • Temperature gradient in sintered materials
  • Time-consuming and energy-consuming processes

U-FAST technology

Direct heating (conduction)
  • Heating using Joule heating
  • Fast, economical processes (30 min)
  • Low energy consumption
  • Lower sintering temperature
  • Limited grain growth

Pulse duration below 1 ms

Pulse duration, which lasts even less than 1ms, gives the advantage of our U-FAST technology over SPS devices from competitors. Current pulses are shown using an oscilloscope