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GeniCore U-FAST (SPS) GC

our industrial spark plasma sintering machine

The Spark Plasma Sintering (SPS) technology, also called FAST (Field Assisted Sintering Technology), enables effective consolidation of pure metal powders, metal alloys, as well as ceramic and metal composites using pulsed direct current. The key aspect of FAST technology is the ability to perform the sintering process at a much lower temperature and at shorter production time than other available methods. This has a positive effect on limiting grain growth and provides much better parameters of the produced materials. The advantages of spark plasma sintering (SPS) also include very short sintering time and homogeneity of the resulting material and high energy efficiency associated mainly with the direct generation of heat inside the material to be sintered.
GeniCore U-FAST, thanks to its advanced heating system based on a unique pulse shape, allows achieving better results compared to other available SPS/FAST devices. This fact has determined the name of the device hence the name GeniCore U-FAST (Upgraded Field-Assisted Sintering Technology). The tests carried out so far on U-FAST materials open up a number of possibilities in areas where the expected material quality is not achievable with other methods. Current activities of GeniCore have confirmed the validity of the use of U-FAST materials in the tool industry, mining and advanced electronics.

U-FAST GC for R&D and Low-Volume Production

The GeniCore U-FAST GC model is a perfect fit for R&D scale and small batch production needs. It is designed for tech enterprises with R&D departments and manufacturing businesses that are keen on developing and experimenting with new materials. These materials can then be scaled up to larger diameters using the U-FAST GC and U-FAST Hybrid devices for commercial scale applications.

GeniCore U-FAST device thanks to its modular design allows to upgrade the device within the project progress which means the GC 85-HV model can be obtained even if initially the GC 35 model was acquired.

Model Recommended Sintered Diameter [mm] Pressing force [kN] Max Current* [A] Voltage [V] Ultimate vacuum [mbar]
U-FAST GC 35 ∅ 35 125 3300 14 < 9×10-2
U-FAST GC 35 – HV ∅ 35 125 3300 14 < 5×10-5
U-FAST GC 55 ∅ 55 200 6600 14 < 9×10-2
U-FAST GC 55 – HV ∅ 55 200 6600 14 < 5×10-5
U-FAST GC 85 ∅ 85 300 10000 14 < 9×10-2
U-FAST GC 85 – HV ∅ 85 300 10000 14 < 5×10-5

* Max Current – The final value of the current is related to the value of the on-site connection voltage , so it can vary accordingly.

Manufacturing process

Graphite mold inside U-FAST vacuum chamber

Temperature measurement

Conventional Method

Indirect heating (radiation / convection)
  • Heating by radiation
  • Low heating factor
  • Temperature gradient in sintered materials
  • Time-consuming and energy-consuming processes

U-FAST technology

Direct heating (conduction)
  • Heating using Joule heating
  • Fast, economical processes (30 min)
  • Low energy consumption
  • Lower sintering temperature
  • Limited grain growth

Pulse duration below 1 ms

Pulse duration, which lasts even less than 1ms, gives the advantage of our U-FAST sintering system over SPS devices from other machines available on the market. Current pulses are shown using an oscilloscope, demonstrating the efficiency of this machine within the vacuum chamber. Additionally, U-FAST technology offers a more environmentally friendly and sustainable approach to material production, reducing the carbon footprint and waste generated during the manufacturing process.

Furthermore, the U-FAST system provides a platform for researchers and engineers to explore a wide range of materials and their applications, fostering collaboration and innovation in various fields such as automotive, energy, and defence. By leveraging the benefits of SPS, U-FAST enables the creation of materials with exceptional properties and performance, opening up new opportunities for breakthroughs in material science and engineering.