Available models

GeniCore U-FAST device thanks to its modular design allows to upgrade the device within the project progress which means the GC 85-HV model can be obtained even if initially the GC 35 model was acquired.

Model Max. Sintered Diameter [mm] Pressing force [kN] Current [A] Voltage [V] Ultimate vacuum [mbar]
U-FAST GC 35 35 125 3300 14 < 5×10-2
U-FAST GC 35 – HV 35 125 3300 14 < 5×10-5
U-FAST GC 55 55 200 6600 14 < 5×10-2
U-FAST GC 55 – HV 55 200 6600 14 < 5×10-5
U-FAST GC 85 85 300 10000 14 < 5×10-2
U-FAST GC 85 – HV 85 300 10000 14 < 5×10-5

 

Manufacturing process

Mold inside U-FAST chamber

Temperature measurement

Conventional Method

Indirect heating (radiation / convection)
  • Heating by radiation
  • Low heating factor
  • Temperature gradient in sintered materials
  • Time-consuming and energy-consuming processes

U-FAST technology

Direct heating (conduction)
  • Heating using Joule heating
  • Fast, economical processes (30 min)
  • Low energy consumption
  • Lower sintering temperature
  • Limited grain growth

Pulse duration below 1 ms

Pulse duration, which lasts even less than 1ms, gives the advantage of our U-FAST technology over SPS devices from competitors. Current pulses are shown using an oscilloscope